FQP2N60 600v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply. features 2.4a, 600v, r ds(on) = 4.7 ? @v gs = 10 v low gate charge ( typical 9.0 nc) low crss ( typical 5.0 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter FQP2N60 units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.4 a - continuous (t c = 100c) 1.5 a i dm drain current - pulsed (note 1) 9.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 140 mj i ar avalanche current (note 1) 2.4 a e ar repetitive avalanche energy (note 1) 6.4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 64 w - derate above 25c 0.51 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 1.95 c w r cs thermal resistance, case-to-sink 0.5 -- c w r ja thermal resistance, junction-to-ambient -- 62.5 c w ! " ! ! ! " " " ! " ! ! ! " " " s d g to-220 fqp series g s d 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
(note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 45mh, i as = 2.4a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 2.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.4 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.2 a -- 3.7 4.7 ? g fs forward transconductance v ds = 50 v, i d = 1.2 a -- 2.45 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 270 350 pf c oss output capacitance -- 40 50 pf c rss reverse transfer capacitance -- 5 7 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 2.4 a, r g = 25 ? -- 10 30 ns t r turn-on rise time -- 25 60 ns t d(off) turn-off delay time -- 20 50 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = 480 v, i d = 2.4 a, v gs = 10 v -- 9.0 11 nc q gs gate-source charge -- 1.6 -- nc q gd gate-drain charge -- 4.3 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2.4 a i sm maximum pulsed drain-source diode forward current -- -- 9.6 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.4 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 2.4 a, di f / dt = 100 a/ s -- 180 -- ns q rr reverse recovery charge -- 0.72 -- c 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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